MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ21193/D
Silicon Power Transistors
The MJ21193 and MJ21...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ21193/D
Silicon Power
Transistors
The MJ21193 and MJ21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic Distortion Characterized High DC Current Gain – hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.5 A, 80 V, 1 Second
MJ21193*
NPN MJ21194*
*Motorola Preferred Device
PNP
16 AMPERE COMPLEMENTARY SILICON POWER
TRANSISTORS 250 VOLTS 250 WATTS
CASE 1–07 TO–204AA (TO–3)
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.5 V Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43 – 65 to +200
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Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%. VCEO(sus) ICEO 250 — — — — 100 Vdc µAdc (continued) Symbol Min Typical Max Unit
Preferred device...