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MJ2955

ST Microelectronics

Complementary Silicon Power Transistors

TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production...


ST Microelectronics

MJ2955

File Download Download MJ2955 Datasheet


Description
TAB 1 2 TO-3 Figure 1. Internal schematic diagram 2N3055, MJ2955 Complementary power transistors Datasheet - production data Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio amplifier Description The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Order code 2N3055 MJ2955 Table 1. Device summary Marking Package 2N3055 MJ2955 TO-3 Packaging Tray November 2013 This is information on a product in full production. DocID4079 Rev 8 1/7 www.st.com Absolute maximum rating 1 Absolute maximum rating 2N3055, MJ2955 Table 2. Absolute maximum rating Symbol Parameter VCBO VCER VCEO VEBO IC IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (RBE = 100 Ω) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Base current Total dissipation at Tc ≤ 25°C Storage temperature Max. operating junction temperature NPN PNP Value 2N3055 MJ2955 100 70 60 7 15 7 115 -65 to 200 200 Unit V V V V A A W °C °C Note: Symbol Table 3. Thermal data Parameter Rthj-case Thermal resistance junction-case max For PNP type voltage and current values are negative Value 1.5 Unit °C/W 2/7 DocID4079 Rev 8 2N3055, MJ2955 2 Electrical characteristics Electrical characteristics (Tcase = 25°C; unless otherwise specified) Symbol Table 4. Electrical characteristics Paramet...




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