MJ4032 MJ4035
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s s s
s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTAR...
MJ4032 MJ4035
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
s s s
s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY
PNP -
NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS
s
1 2
TO-3
DESCRIPTION The MJ4035 is silicon epitaxial-base
NPN power
transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in general purpose and amplifier applications. The complementary
PNP type is the MJ4032.
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 KΩ
R2 Typ. = 55 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
PNP NPN V CBO V CEO V EBO IC IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value MJ4032 MJ4035 100 100 5 16 0.5 150 -65 to 200 200 V V V A A W
o o
Unit
C C
For
PNP types voltage and current values are negative.
June 1997
1/4
MJ4032 / MJ4035
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.17
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CER I CEO I EBO Parameter Collector Cut-off Current (R BE = 1K Ω ) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 100 V V CE = 100 V V CE = 50 V V EB = 5 V I C = 100 mA I C = 10 A I C = 16 A I C = 1...