® MJ802
SILICON NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
DESCRIPTION The MJ802 is a silicon Epit...
® MJ802
SILICON
NPN POWER
TRANSISTOR
s STMicroelectronics PREFERRED SALESTYPE
DESCRIPTION The MJ802 is a silicon Epitaxial-Base power
)
transistor mounted in Jedec TO-3 metal case. It t(sis intended for general purpose power amplifier Producand switching applications.
1 2
TO-3
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEO Collector-emitter Voltage (IB = 0)
VCBO Collector-base Voltage (IE = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current
IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature
Tj Max. Operating Junction Temperature
Value 90 100 4 30 7.5 200
-65 to 200 200
Unit V V V A A W oC oC
October 2003
1/4
MJ802
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
0.875
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Cut-off Current (IE = 0)
VCB = 100 V VCB = 10...
