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MJB32B
PNP SILICON POWER TRANSISTOR
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SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")...
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MJB32B
PNP SILICON POWER
TRANSISTOR
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SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP32B
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APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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DESCRIPTION The MJB32B is manufactured using Epitaxial-base Technology for use in medium power linear and switching applications.
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D2PAK (TO-263) (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 C T amb ≤ 25 o C Storage Temperature Max. Operating Junction Temperature
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Value -80 -80 -5 -3 -5 -1 40 2 -65 to 150 150
Unit V V V A A A W W
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C C
June 2001
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MJB32B
THERMAL DATA
R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 62.5
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C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEO I CES I EBO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -60 V V CE = -80 V V EB = -5 V I C = -30 mA -80 Min. Typ. Max. -50 -20 -0.1 Unit µA µA mA V
V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE ∗ h FE ∗ h fe Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signall Curr...