MJD210

MJD210 MJD210 D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Peck Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value - 40 - 25 -8 -5 - 10 -1 12.5 1.4 150 - 65 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICBO IEBO hFE Parameter * Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = - 10mA, IB = 0 VCB = - 40V, IE = 0 VEBO = - 8V, IC = 0 VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 2A VCE = - 2V, IC = - 5A IC = - 500mA, IB= - 50mA IC = - 2A, IB = - 200mA IC = - 5A, IB = - 1A IC = - 5A, IB = - 1A VCE = - 1V, IC = - 2A VCE = - 10V, IC = - 100mA VCB = - 10V, IE = 0, f = 0.1MHz 65 120 70 45 10 Min. -25 Max. -100 -100 180 -0.3 -0.75 -1.8 -2.5 -1.6 V V V V V MHz pF Units V nA nA VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat) VBE(on) fT Cob * Base-Emitter Saturation Voltage * Base-Emitter ON Voltage Curre...