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MJD2955 Dataheets PDF



Part Number MJD2955
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Complementary Silicon Power Transistors
Datasheet MJD2955 DatasheetMJD2955 Datasheet (PDF)

MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAX.

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MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T APPLICATIONS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature For PNP type voltage and current values are negative. February 2002 NPN PNP Value MJD3055 MJD2955 70 60 5 10 6 20 -65 to 150 150 Unit V V V A A W oC oC 1/6 MJD2955 / MJD3055 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 6.25 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEX ICBO Collector Cut-off VCE = 70 V Current (VBE = -1.5 V) VCE = 70 V Collector Cut-off Current (IE = 0) VCB = 70 V VCB = 70 V Tj = 150 oC Tj = 150 oC ICEO Collector Cut-off Current (IB = 0) IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VBE(on)∗ Base-Emitter Voltage hFE∗ DC Current Gain VCE = 30 V VEB = 5 V IC = 30 mA IC = 4 A IC = 10 A IC = 4 A IC = 4 A IC = 10 A IB = 0.4 A IB = 3.3 A VCE = 4 V VCE = 4 V VCE = 4 V fT Transition Frequency IC = 0.5 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. VCE = 10 V f = 500 KHz Min. 60 20 5 2 Typ. Max. 20 2 20 2 50 0.5 1.1 8 1.8 100 Unit µA mA µA mA µA mA V V V V MHz Safe Operating Area Derating Curves 2/6 DC Current Gain (NPN type) MJD2955 / MJD3055 DC Current Gain (PNP type) DC Transconductance (NPN type) DC Transconductance (PNP type) Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) 3/6 MJD2955 / MJD3055 Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) 4/6 DIM. A A1 A2 B B2 C C2 D E G H L2 L4 V2 MJD2955 / MJD3055 TO-252 (DPAK) MECHANICAL DATA MIN. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.60 0o mm TYP. 0.8 MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 8o MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.024 0o inch TYP. 0.031 MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.039 0o P032P_B 5/6 MJD2955 / MJD3055 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 .


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