Document
MJD2955 ® MJD3055
COMPLEMENTARY POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
s ELECTRICALLY SIMILAR TO MJE2955T AND MJE3055T
APPLICATIONS s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.
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DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0)
IC Collector Current IB Base Current Ptot Total Dissipation at Tc = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature
For PNP type voltage and current values are negative.
February 2002
NPN PNP
Value MJD3055 MJD2955
70 60 5 10 6 20 -65 to 150 150
Unit
V V V A A W oC oC
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MJD2955 / MJD3055
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
6.25 100
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX ICBO
Collector Cut-off
VCE = 70 V
Current (VBE = -1.5 V) VCE = 70 V
Collector Cut-off Current (IE = 0)
VCB = 70 V VCB = 70 V
Tj = 150 oC Tj = 150 oC
ICEO
Collector Cut-off Current (IB = 0)
IEBO
Emitter Cut-off Current (IC = 0)
VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0)
VCE(sat)∗ Collector-Emitter Saturation Voltage
VBE(on)∗ Base-Emitter Voltage
hFE∗ DC Current Gain
VCE = 30 V
VEB = 5 V
IC = 30 mA
IC = 4 A IC = 10 A IC = 4 A IC = 4 A IC = 10 A
IB = 0.4 A IB = 3.3 A
VCE = 4 V
VCE = 4 V VCE = 4 V
fT Transition Frequency IC = 0.5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative.
VCE = 10 V f = 500 KHz
Min.
60
20 5 2
Typ.
Max. 20 2 20 2 50
0.5
1.1 8 1.8 100
Unit µA mA µA mA µA
mA
V
V V V
MHz
Safe Operating Area
Derating Curves
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DC Current Gain (NPN type)
MJD2955 / MJD3055
DC Current Gain (PNP type)
DC Transconductance (NPN type)
DC Transconductance (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
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MJD2955 / MJD3055
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type)
Transition Frequency (PNP type)
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DIM.
A A1 A2 B B2 C C2 D E G H L2 L4 V2
MJD2955 / MJD3055
TO-252 (DPAK) MECHANICAL DATA
MIN. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
0.60 0o
mm TYP.
0.8
MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10
1.00 8o
MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368
0.024 0o
inch TYP.
0.031
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
0.039 0o
P032P_B
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MJD2955 / MJD3055
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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