MJD31C
Low voltage NPN power transistor
Features
■ Surface-mounting TO-252 power package in tape and reel
■ Complement...
MJD31C
Low voltage
NPN power
transistor
Features
■ Surface-mounting TO-252 power package in tape and reel
■ Complementary to the
PNP type MJD32C
Application
■ General purpose linear and switching equipment
Description
The device is manufactured in planar technology with “base island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Datasheet − production data
TAB 3
1
DPAK TO-252
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
MJD31CT4
MJD31C
Package DPAK
June 2012
This is information on a product in full production.
Doc ID 3543 Rev 5
Packaging Tape and reel
1/13
www.st.com
13
Electrical ratings
1 Electrical ratings
Table 2. Symbol
Absolute maximum ratings Parameter
VCBO VCEO VEBO
IC ICM IB PTOT TSTG TJ
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total di...