MJD32C

MJD32/32C MJD32/32C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP32 and TIP32C 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : MJD32 : MJD32C VCEO Collector-Emitter Voltage : MJD32 : MJD32C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) TJ TSTG Junction Temperature Storage Temperature Value - 40 - 100 - 40 - 100 -5 -3 -5 -1 15 1.56 150 - 65 ~ 150 Units V V V V V A A A W W °C °C VEBO IC ICP IB PC Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : MJD32 : MJD32C Collector Cut-off Current : MJD32 : MJD32C ICES Collector Cut-off Current : MJD32 : MJD32C IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCE = - 40V, VBE = 0 VCE = - 100V, VBE = 0 VBE = - 5V, IC = 0 VCE = - 4V, IC = - 1A VCE = - 4V, IC = - 3A IC = - 3, IB = - 375mA VCE = - 4A, IC = - 3A VCE = -10V, IC = - 500mA 3 25 10 -20 -20 -1 50 -1.2 -1.8 V V MHz µA µA mA VCE = - 40V, IB = 0 VCE = - 60V, IB = 0 -50 -50 µA µA ...