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MJD340 Dataheets PDF



Part Number MJD340
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet MJD340 DatasheetMJD340 Datasheet (PDF)

MJD340 ® MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MEDIUM VOLTAGE CAPABILITY s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO MJE340 AND MJE350 APPLICATIONS s SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology.

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MJD340 ® MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s MEDIUM VOLTAGE CAPABILITY s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICAL SIMILAR TO MJE340 AND MJE350 APPLICATIONS s SOLENOID/RELAY DRIVERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs. They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor. 3 1 DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VCBO Collector-Base Voltage (IE = 0) VCEO Collector-Emitter Voltage (IB = 0) VEBO Emitter-Base Voltage (IC = 0) IC Collector Current ICM Collector Peak Current (tp = 25 oC) Ptot Total Power Dissipation at Tcase ≤ 25 oC Tstg Storage Temperature Tj Max Operating Junction Temperature For PNP types voltage and current values are negative. September 2003 NPN PNP Value MJD340 MJD350 300 300 3 0.5 0.75 15 -65 to 150 150 Unit V V V A A W oC oC 1/5 MJD340 / MJD350 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Max 8.33 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (vBE = 0) VCB = 300 V IEBO Emitter Cut-off Current VEB = 3 V (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 1 mA hFE∗ DC Current Gain IC = 50 mA ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % For PNP type voltage and current values are negative. VCE = 10 V Min. Typ. 300 30 Max. 0.1 0.1 240 Unit mA mA V Safe Operating Area Derating Curve 2/5 DC Current Gain (NPN type) MJD340 / MJD350 DC Current Gain (PNP type) Collector Emitter Saturation Voltage (NPN type) Collector Emitter Saturation Voltage (PNP type) 3/5 MJD340 / MJD350 DIM. A A1 A2 B B2 C C2 D E G H L2 L4 V2 TO-252 (DPAK) MECHANICAL DATA MIN. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.60 0o mm TYP. 0.8 MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00 8o MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.024 0o inch TYP. 0.031 MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.039 0o P032P_B 4/5 MJD340 / MJD350 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized f.


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