MJD44

MJD44H11 MJD44H11 General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications Load Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular MJE44H Fast Switching Speeds Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 80 5 8 16 20 1.75 150 - 65 ~ 150 Units V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO IEBO hFE VCE(sat) VBE(on) fT Cob tON tSTG tF Parameter *Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC = 30mA, IB = 0 VCE = 80V, IB = 0 VBE = 5V, IC = 0 VCE = 1V, IC = 2A VCE = 1V, IC = 4A IC = 8A, IB = 0.4A IC = 8A, IB = 0.8A VCE = 10V, IC = 0.5A VCB =10V, f = 1MHz IC = 5A IB1 = - IB2 = 0.5A 50 130 300 500 140 60 40 1 1.5 V V MHz pF ns ns ns Min. 80 Typ. Max. 10 50 Units V µA µA * Pulse Test: PW≤300µ...