MJD44H11

MJD44H11, MJD45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Datasheet − production data . TAB2 3 1 DPAK TO-252 Figure 1. Internal schematic diagram C (TAB) C (TAB) (1) B (1) B E (3) E (3) Table 1. Device summary Order codes Marking MJD44H11T4 MJD44H11 MJD45H11T4 MJD45H11 Polarity NPN PNP Package DPAK DPAK Packaging Tape and reel Tape and reel May 2012 This is information on a product in full production. Doc ID 5470 Rev 4 1/11 www.st.com 11 Absolute maximum ratings 1 Absolute maximum ratings Note: Table 2. Absolute maximum ratings Symbol Parameter VCEO VEBO IC ICM PTOT TSTG TJ Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature For PNP types voltage and current values are negative. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case max MJD44H11, MJD45H11 Value 80 5 8 16 20 -55 to 150 150 Unit V V A A W °C °C Value 6.25 Unit °C/W 2/11 Doc ID 5470 Rev 4 MJD44H11, MJD45H11 2 Electrical characteristics Electrical...