MJD45H11

MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 MJD45H11 PNP Epitaxial Silicon Transistor Features General-Purpose Power and Switching such as Output or Driver Stages in Applications D-PAK for Surface-Mount Applications Lead-Formed for Surface Mount Application (No Suffix) Fast Switching Speeds Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number MJD45H11TF MJD45H11TM Top Mark MJD45H11 MJD45H11 Package TO-252 3L (DPAK) TO-252 3L (DPAK) Packing Method Tape and Reel Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO VEBO IC ICP PC TJ TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25°C) Collector Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range - 80 -5 -8 - 16 20 1.75 150 - 55 to +150 V V A A W °C °C © 2003 Fairchild Semiconductor Corporation MJD45H11 Rev. 3.2 1 www.fairchildsemi.com MJD45H11 — PNP Epitaxial Silicon Transistor Electr...