MJD44H11, MJD45H11
Complementary power transistors
Features
■ Low collector-emitter saturation voltage ■ Fast switching...
MJD44H11, MJD45H11
Complementary power
transistors
Features
■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power
package in tape and reel (suffix "T4")
Applications
■ Power amplifier ■ Switching circuits
Description
These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications.
Datasheet − production data
.
TAB2
3 1 DPAK TO-252
Figure 1. Internal schematic diagram
C (TAB)
C (TAB)
(1) B
(1) B
E (3)
E (3)
Table 1. Device summary
Order codes
Marking
MJD44H11T4
MJD44H11
MJD45H11T4
MJD45H11
Polarity
NPN PNP
Package DPAK DPAK
Packaging Tape and reel Tape and reel
May 2012
This is information on a product in full production.
Doc ID 5470 Rev 4
1/11
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Absolute maximum ratings
1 Absolute maximum ratings
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
VCEO VEBO
IC ICM PTOT TSTG TJ
Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature
For
PNP types voltage and current values are negative.
Table 3. Thermal data
Symbol
Parameter
RthJC Thermal resistance junction-case max
MJD44H11, MJD45H11
Value 80 5 8 16 20
-55 to 150 150
Unit V V A A W °C °C
Value 6.25
Unit °C/W
2/11 Doc ID 5470 Rev 4
MJD44H11, MJD45H11
2 Electrical characteristics
Electrical...