MJE13007 Transistor Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

NPN Bipolar Power Transistor

Manufacture

ON

Total Page 10 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
MJE13007
Switch-mode NPN Bipolar
Power Transistor
For Switching Power Supply Applications
The MJE13007 is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V switch−mode applications such as Switching
Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and
Deflection circuits.
Features
SOA and Switching Applications Information
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
Complementary to the MJE5850 through MJE5852 Series
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Base Current
− Continuous
Base Current
− Peak (Note 1)
Emitter Current − Continuous
Emitter Current − Peak (Note 1)
Total Device Dissipation @ TC = 25_C
Derate above 25°C
Symbol
VCEO
VCES
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
Value
400
700
9.0
8.0
16
4.0
8.0
12
24
80
0.64
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
Adc
Adc
W
W/_C
Operating and Storage Temperature
TJ, Tstg −65 to 150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8from Case for 5 Seconds
Symbol
RqJC
RqJA
TL
Max
1.56
62.5
260
Unit
_C/W
_C/W
_C
*Measurement made with thermocouple contacting the bottom insulated mounting
surface of the package (in a location beneath the die), the device mounted on a
heatsink with thermal grease applied at a mounting torque of 6 to 8lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
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POWER TRANSISTOR
8.0 AMPERES
400 VOLTS − 80 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
TO−220AB
CASE 221A−09
STYLE 1
123
MARKING DIAGRAM
MJE13007G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MJE13007G
TO−220
(Pb−Free)
50 Units / Rail
Publication Order Number:
MJE13007/D

MJE13007
MJE13007
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCES = 700 Vdc)
(VCES = 700 Vdc, TC = 125°C)
Emitter Cutoff Current
(VEB = 9.0 Vdc, IC = 0)
VCEO(sus)
400
− Vdc
ICES
IEBO
mAdc
− − 0.1
− − 1.0
− − 100 mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 6
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 2.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
Base−Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
hFE
8.0 − 40
5.0 − 30
VCE(sat)
Vdc
− 1.0
− 2.0
− 3.0
− 3.0
VBE(sat)
Vdc
− 1.2
− 1.6
− 1.5
fT
4.0 14
− MHz
Cob − 80 − pF
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125 Vdc, IC = 5.0 A,
IB1 = IB2 = 1.0 A, tp = 25 ms,
Duty Cycle 1.0%)
Inductive Load, Clamped (Table 1)
td
0.025
0.1
ms
tr − 0.5 1.5
ts − 1.8 3.0
tf − 0.23 0.7
Voltage Storage Time
VCC = 15 Vdc, IC = 5.0 A
Vclamp = 300 Vdc
TC = 25°C
TC = 100°C
tsv − 1.2 2.0 ms
− 1.6 3.0
Crossover Time
IB(on) = 1.0 A, IB(off) = 2.5 A
LC = 200 mH
TC = 25°C
TC = 100°C
tc − 0.15 0.30 ms
− 0.21 0.50
Fall Time
TC = 25°C
TC = 100°C
tfi − 0.04 0.12 ms
− 0.10 0.20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
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2


Features MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply A pplications The MJE13007 is designed f or high−voltage, high−speed power s witching inductive circuits where fall time is critical. It is particularly su ited for 115 and 220 V switch−mode ap plications such as Switching Regulators , Inverters, Motor Controls, Solenoid/R elay drivers and Deflection circuits. F eatures • SOA and Switching Applicati ons Information • Standard TO−220 These Devices are Pb−Free and are RoHS Compliant* • Complementary to th e MJE5850 through MJE5852 Series MAXIM UM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Br eakdown Voltage Emitter−Base Voltage Collector Current − Continuous Col lector Current − Peak (Note 1) Base Current − Continuous Base Current − Peak (Note 1) Emitter Current − Continuous Emitter Current − Peak (N ote 1) Total Device Dissipation @ TC = 25_C Derate above 25°C Symbol VCEO VCES VEBO IC ICM IB IBM I.
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