MJE13007 TRANSISTOR Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

SILICON NPN SWITCHING TRANSISTOR

Manufacture

ST Microelectronics

Total Page 4 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
® MJE13007
SILICON NPN SWITCHING TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL
DESCRIPTION
The MJE13007 is a silicon multiepitaxial mesa
NPN power transistor mounted in Jedec TO-220
plastic package.
It is are inteded for use in motor control, switching
regulators etc.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ym b o l
VCEV
V CEO
V EBO
IC
ICM
IB
IBM
IE
IEM
Ptot
Tstg
Tj
Parameter
Collector-Emit ter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Emitter Current
Emitter Peak Current
Total Dissipation at Tc 25 oC
Storage Temperature
Max. O perating Junction Temperature
June 1998
Value
700
400
9
8
16
4
8
12
24
80
-65 to 150
150
Uni t
V
V
V
A
A
A
A
A
A
W
oC
oC
1/4

MJE13007
MJE13007
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
Max
1.56
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = rated VCEV
VCE = rated VCEV Tc = 100 o C
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus )Collect or-Emitter
Sustaining Voltage
VEB = 9 V
IC = 10 mA
VCE(sat)Collect or-Emitter
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 8 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 2 A
IB = 1 A
Tc = 100 oC
VBE(s at)Base-Emitt er
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 1 A
Tc = 100 oC
hFEDC Current G ain
IC = 2 A
IC = 5 A
VCE = 5 V
VCE = 5 V
fT Transit ion F requency IC = 0. 5 A VCE = 10 V f = 1 MHz
CCBO Output Capacitance
IE = 0
VCB = 10 V f = 0.1 MHz
Min.
400
8
6
4
Typ .
110
M a x.
1
5
1
1
1.5
3
2
1.2
1.6
1.5
40
30
Unit
mA
mA
mA
V
V
V
V
V
V
V
V
MHz
pF
RESISTIVE LOAD
Symb ol
ton
ts
tf
Pa ram et er
Turn-on Time
St orage Time
Fall Time
Test Conditions
VCC = 125 V IC = 5 A
IB1 = -IB2 = 1 A
tp = 25 µs Duty Cycle < 1%
Min.
Typ.
M a x.
0.7
3
0.7
Unit
µs
ms
ms
INDUCTIVE LOAD
Symb ol
Pa ram et er
Test Conditions
tf Fall Time
VCC = 125 V IC = 5 A IB1 = 1 A
tp = 25 µs Duty Cycle < 1%
tf Fall Time
VCC = 125 V IC = 5 A IB1 = 1 A
tp = 25 µs Duty Cycle < 1%
Tc = 100 oC
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min.
Typ.
M a x.
0.3
0.6
Unit
µs
µs
2/4


Features ® MJE13007 SILICON NPN SWITCHING TRANS ISTOR s s s SGS-THOMSON PREFERRED SAL ESTYPE NPN TRANSISTOR HIGH CURRENT CAPA BILITY APPLICATIONS s SWITCHING REGULA TORS s MOTOR CONTROL DESCRIPTION The MJ E13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. It is are inted ed for use in motor control, switching regulators etc. 3 1 2 TO-220 INTERN AL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I C M IB I BM IE I EM P t ot T stg Tj Param eter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Coll ector Current Collector Peak Current Ba se Current Base Peak Current Emitter Cu rrent Emitter Peak Current Total Dissip ation at T c ≤ 25 C Storage Temperatu re Max. O perating Junction Temperature o Value 700 400 9 8 16 4 8 12 24 80 - 65 to 150 150 Uni t V V V A A A A A A W o o C C June 1998 1/4 MJE13007 TH ERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 1.56 .
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