MJE13007 Transistor Datasheet

MJE13007 Datasheet, PDF, Equivalent


Part Number

MJE13007

Description

NPN Silicon Transistor

Manufacture

Fairchild

Total Page 5 Pages
Datasheet
Download MJE13007 Datasheet


MJE13007
MJE13006/13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: MJE13006
: MJE13007
VCEO
Collector-Emitter Voltage
: MJE13006
: MJE13007
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
600
700
300
400
9
8
16
4
80
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector- Emitter Breakdown Voltage
: MJE13006
: MJE13007
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50
Min. Typ. Max. Units
300 V
400 V
1 mA
8 60
5 30
1V
2V
3V
1.2 V
1.6 V
110 pF
4 MHz
1.6 µs
3 µs
0.7 µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001

MJE13007
Typical Characteristics
100
V = 5V
CE
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
V =125V
CC
I =5I
CB
tSTG
100
tF
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
10
©2001 Fairchild Semiconductor Corporation
10
I =3I
CB
1
VBE(sat)
0.1 VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
tR
100
tD, VBE(off)=5V
V =125V
CC
I =5I
CB
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
10
100
10
DC
1
0.1
0.01
1
MJE13006
MJE13007
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
Rev. A1, February 2001


Features MJE13006/13007 MJE13006/13007 High Volt age Switch Mode Application • High Sp eed Switching • Suitable for Switchin g Regulator and Motor Control 1 TO-22 0 2.Collector 3.Emitter 1.Base NPN Si licon Transistor Absolute Maximum Ratin gs TC=25°C unless otherwise noted Symb ol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collec tor-Emitter Voltage Emitter- Base Volta ge Collector Current (DC) Collector Cur rent (Pulse) Base Current Collector Dis sipation (TC=25°C) Junction Temperatur e Storage Temperature : MJE13006 : MJE1 3007 : MJE13006 : MJE13007 Value 600 70 0 300 400 9 8 16 4 80 150 - 65 ~ 150 Un its V V V V V A A A W °C °C Electric al Characteristics TC=25°C unless othe rwise noted Symbol BVCEO Parameter Coll ector- Emitter Breakdown Voltage : MJE1 3006 : MJE13007 Emitter Cut-off Current *DC Current Gain *Collector-Emitter Sa turation Voltage Test Condition IC = 10 mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, I C = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB.
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