Power Transistors. MJE15030 Datasheet


MJE15030 Transistors. Datasheet pdf. Equivalent


Part Number

MJE15030

Description

Complementary Silicon Plastic Power Transistors

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MJE15030 Datasheet


MJE15030
MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCEO
120
150
Vdc
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCB Vdc
120
150
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
VEB 5.0 Vdc
IC 8.0 Adc
ICM 16 Adc
IB 2.0 Adc
PD
50 W
0.40 W/_C
Total Device Dissipation
@ TA = 25_C
Derate above 25°C
PD
2.0 W
0.016
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
RqJC
RqJA
Max
2.5
62.5
Unit
_C/W
_C/W
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8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
PNP
COLLECTOR
2,4
NPN
COLLECTOR
2,4
1
BASE
1
BASE
3
EMITTER
4
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
MJE150xxG
AY WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MJE150xx = Device Code
x = 28, 29, 30, or 31
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 7
1
Publication Order Number:
MJE15028/D

MJE15030
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
VCEO(sus)
Vdc
120 −
150 −
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031
ICEO
mAdc
0.1
0.1
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031
ICBO
mAdc
10
10
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
10
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
40
40
40
20
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN to PNP)
hFE Typ
2
3
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VCE(sat)
VBE(on)
Vdc
0.5
Vdc
1.0
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT MHz
30 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT = hfe⎪• ftest.
TA TC
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2


Features MJE15028, MJE15030 (NPN), MJE15029, MJE1 5031 (PNP) Complementary Silicon Plast ic Power Transistors These devices are designed for use as high−frequency dr ivers in audio amplifiers. Features • High Current Gain − Bandwidth Produc t • TO−220 Compact Package • Thes e Devices are Pb−Free and are RoHS Co mpliant* MAXIMUM RATINGS Rating Symb ol Value Unit Collector−Emitter Vo ltage MJE15028G, MJE15029G MJE15030G, M JE15031G VCEO 120 150 Vdc Collector −Base Voltage MJE15028G, MJE15029G MJ E15030G, MJE15031G VCB Vdc 120 150 Em itter−Base Voltage Collector Current − Continuous Collector Current − Pe ak Base Current Total Device Dissipatio n @ TC = 25_C Derate above 25°C VEB 5 .0 Vdc IC 8.0 Adc ICM 16 Adc IB 2.0 Adc PD 50 W 0.40 W/_C Total Device Dissip ation @ TA = 25_C Derate above 25°C P D 2.0 W 0.016 W/_C Operating and Sto rage Junction Temperature Range TJ, Ts tg −65 to +150 _C Stresses exceedin g those listed in the Maximum Ratings table may damage the device. If any of these limits a.
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