MJE15035

MJE15034 (NPN), MJE15035 (PNP) Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers. Features High Current Gain − Bandwidth Product TO−220 Compact Package Epoxy meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCB VEB IC ICM IB PD 350 350 5.0 4.0 8.0 1.0 50 0.40 Vdc Vdc Vdc Adc Adc Adc W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 W 0.016 W/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Thermal Resistance, Junction−to−Case RqJC 2.5 Thermal Resistance, Junction−to−Ambient RqJA 62.5 Unit _C/W _C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D....