MJE182

MJE182 Low voltage high speed switching NPN transistor Features ■ High speed switching ■ NPN device t(s)Applications c■ Audio amplifier u■ High speed switching applications ProdDescription teThis device is an NPN low voltage transistor lemanufactured using epitaxial planar technology oand housed in a SOT-32 plastic package. It is sdesigned for low power audio amplifiers and low Obsolete Product(s) - Obcurrent, high speed switching applications.  SOT-32 Figure 1. Internal schematic diagram Table 1. Device summary Order code MJE182 Marking MJE182 Package SOT-32 Packaging Tube August 2011 Doc ID 022074 Rev 1 1/7 www.st.com 7 Electrical ratings 1 Electrical ratings MJE182 Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCEO Collector-emitter voltage (IB = 0) 80 V VCBO Collector-base voltage (IE = 0) 100 V VEBO Base-emitter voltage (IC = 0) 7V IC Collector current 3A ICM t(s)IB cIBM duPTOT roTstg PTJ Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) Total dissipation at Tc ≤ 25 °C Storage temperature Total power dissipation at Tc ≤ 25 °C soleteTable 3. Thermal data bSymbol Parameter - ORthJC Obsolete Product(s)Rth-amb Thermal resistance junction-case_max Thermal resistance junction-ambient_max 6 1 2 12.5 -65 to 150 150 A A A W °C Value 10 83.3 Unit °C/W °C/W 2/7 Doc ID 022074 Rev 1 MJE182 2 Electrical characteristics Electrical characteristics Tcase = 25 °C unless otherwise specified. Table 4....