MJE2955

MJE2955T MJE2955T General Purpose and Switching Applications DC Current Gain Specified to IC = 10 A High Current Gain Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 70 - 60 -5 - 10 -6 75 0.6 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICEO ICEX1 ICEX2 IEBO hFE VCE(sat) VBE (on) fT Parameter Collector- Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product Test Condition IC= - 200mA, IB = 0 VCE = - 30V, IB = 0 VCE = - 70V, VBE(off) = 1.5V VCE = - 70V, VBE(off) = 1.5V @ TC = 150°C VEB = - 5V, IC = 0 VCE = - 4V, IC = - 4A VCE = - 4V, IC = - 10A IC = - 4A, IB = - 0.4A IC = - 10A, IB = - 3.3A VCE = - 4V, IC = - 4A VCE = - 10V, IC = - 500mA 2 20 5 Min. -60 Max. -700 -1 -5 -5 100 -1.1 -8 -1.8 V V V MHz Units V µA mA mA mA * Pulse test: PW≤300µs, duty cycle≤2% Pulse ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE2955T Typical Charac...