MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in ge...
MJE2955T (
PNP), MJE3055T (
NPN)
Complementary Silicon Plastic Power
Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
High Current Gain − Bandwidth Product These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCB
VEB
IC IB
PD (Note 1)
60 70 5.0 10 6.0
75 0.6
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
must be observed.
THERMAL CHARACTERISTICS Charac...
