Silicon Transistor. MJE3055 Datasheet

MJE3055 Transistor. Datasheet pdf. Equivalent

Part MJE3055
Description NPN Silicon Transistor
Feature MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A.
Manufacture Fairchild
Datasheet
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MJE3055
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A
• High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
PC
PC
TJ
TSTG
Collector -Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
70
60
5
10
6
75
0.6
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
ICEO
ICEX1
ICEX2
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
IEBO
hFE
Emitter Cut-off Current
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE (on)
*Base-Emitter On Voltage
fT Current Gain Bandwidth Product
* Pulse test: PW300µs, duty cycle2% Pulse
IC = 200mA, IB = 0
VCE = 30V, IB = 0
VCE = 70V, VBE(off) = -1.5V
VCE = 70V, VBE(off) = -1.5V
@ TC = 150°C
VEB = 5V, IC = 0
VCE = 4V, IC = 4A
VCE = 4V, IC = 10A
IC = 4A, IB = 0.4A
IC = 10A, IB = 3.3A
VCE = 4V, IC = 4A
VCE = 10V, IC = 500mA
Min.
60
Max.
700
1
5
Units
V
µA
mA
mA
5 mA
20 100
5
1.1 V
8V
1.8 V
2 MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001



MJE3055
Typical Characteristics
1000
100
V = 2V
CE
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
100
10
DC 5m1sms
1
0.1
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
10
1 VBE(sat)
IC = 10IB
0.1
VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
105
90
75
60
45
30
15
0
0
25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001





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