MJE3055T

MJE3055T MJE3055T General Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 70 60 5 10 6 75 0.6 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICEO ICEX1 ICEX2 IEBO hFE VCE(sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Test Condition IC = 200mA, IB = 0 VCE = 30V, IB = 0 VCE = 70V, VBE(off) = -1.5V VCE = 70V, VBE(off) = -1.5V @ TC = 150°C VEB = 5V, IC = 0 VCE = 4V, IC = 4A VCE = 4V, IC = 10A IC = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V µA mA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test: PW≤300µs, duty cycle≤2% Pulse ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE3055T Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 VCE = 2V IC ...