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MJE340 Datasheet, Equivalent, Silicon Transistor.NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor |
| Part | MJE340 |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Feature | MJE340 MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 300 5 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Electrical Characteristics TC=25°C unless otherwi. |
| Manufacture | Fairchild |
| Datasheet |
| Part | MJE340 |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Feature | MJE340 MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 300 5 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Electrical Characteristics TC=25°C unless otherwi. |
| Manufacture | Fairchild |
| Datasheet |
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