MJE340

MJE340 MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 300 300 5 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 1mA, IB = 0 VCB = 300V, IE =0 VBE = 3V, IC = 0 VCE = 10V, IC = 50mA 30 Min. 300 Max. 100 100 240 Units V µA µA ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE340 Typical Characteristics 1000 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE VCE = 2V 1.2 IC = 10IB 1.0 hFE, DC CURRENT GAIN 100 0.8 V BE(sat) 0.6 V CE(sat) 0.4 10 0.2 1 1 10 100 1000 0.0 10 100 1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 32 28 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 24 1 10 µs 20 0 50 s 1m µs DC 16 12 0.1 8 4 0.01 1 10 100 0 0 25 50 o 75 100 125 150 175 VCE ...