MJE350

MJE350 MJE350 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE340 1 TO-126 2.Collector 3.Base 1. Emitter ..PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value - 300 - 300 -5 - 500 20 150 - 65 ~ 150 Units V V V mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = - 1mA, IB = 0 VCB = - 300V, IE = 0 VBE = - 3V, IC = 0 VCE = - 10V, IC = - 50mA 30 Min. -300 Max. -100 -100 240 Units V µA µA ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE350 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = 10V IC = 10IB hFE, DC CURRENT GAIN 100 -1 VBE(sat) VCE(sat) -0.1 10 1 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10000 25 IC[A], COLLECTOR CURRENT -1000 PC[W], POWER DISSIPATION 20 15 10 0µ s 50 0µ s 1m DC 10 s -100 5 -10 -10 0 -100 -1000 0 25 50 o 75 ...