MJE521

® MJE521 SILICON NPN TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN )transistor in Jedec SOT-32 plastic package. t(sIt is intended for use in 5 to 20W audio amplifiers, Producgeneral purpose amplifier and switching circuits. 1 2 3 SOT-32 - ObsoleteINTERNAL SCHEMATIC DIAGRAM Obsolete Product(s)ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 40 V VCEO VEBO IC Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current 40 V 4V 4A ICM Collector Peak Current (tp < 5 ms) 8A IB Base Current Ptot Total Dissipation at Tc ≤ 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 2 40 -65 to 150 150 A W oC oC September 2003 1/4 MJE521 THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient Max 3.12 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit...