MJE701

MJE700/701/702/703 MJE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC Complement to MJE800/801/802/803 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage : MJE700/701 : MJE702/703 Value - 60 - 80 - 60 - 80 -5 -4 - 0.1 40 150 - 55 ~ 150 Unit s V V V V V A A W °C °C R1 R2 E Equivalent Circuit C B Collector-Emitter Voltage : MJE700/701 : MJE702/703 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : MJE700/701 : MJE702/703 Collector Cut-off Current : MJE700/701 : MJE702/703 Collector Cut-off Current Test Condition IC = - 10mA, IB = 0 Min. -60 -80 -100 -100 -100 -500 -2 750 750 100 -2.5 -2.8 -3 -1.2 -2.5 -3 V V V V V V Max. Units V V µA µA µA µA mA ICEO VCE = - 60V, IB = 0 VCE = - 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = - 5V, IC = 0 VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A IC = - 1.5A, IB = - 30mA IC = - 2A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3V, IC = - 1.5A VCE = - 3V, IC = - 2A VCE = - 3V, IC = - 4A ICBO IEBO hFE Emitter C...