MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE8503A/D
Advance Information
MJE8503A*
*Motorola Pref...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE8503A/D
Advance Information
MJE8503A*
*Motorola Preferred Device
SWITCHMODE™ Series
NPN Bipolar Power
Transistor
The MJE8503A
transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are suited for line operated switchmode applications such as: Switching
Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Featuring 1500 Volt Collector-Base Breakdown Capability Fast Switching: 180 ns Typical Fall Times 450 ns Typical Crossover Times 1.2 µs Typical Storage Times Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 VCES
POWER
TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS
CASE 221A–06 TO–220AB
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Collector Current — Peak (1) Collector Current — Continuous Collector Current — Peak Total Power Dissipation @ TC = 25°C @ TC = 100°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO(sus) VCES VCBO VEBO IC IB IBM PD Value 700 1500 1500 5.0 5.0 10 4.0 4.0 80 21 0.8 – 65 to +125 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 sec. (1) Pulse Test: P...