MJH11021

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) Collector−Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) — MJH11018, 17 = 200 Vdc (Min) — MJH11020, 19 = 250 Vdc (Min) — MJH11022, 21 Low Collector−Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A = 1.8 V (Typ) @ IC = 10 A Monolithic Construction These are Pb−Free Devices MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCEO Max 150 200 250 Unit Vdc Collector−Base Voltage MJH11018, MJH11017 MJH11020, MJH11019 MJH11022, MJH11021 VCB Vdc 150 200 250 Emitter−Base Voltage Collector Current − Continuous − Peak (Note 1) VEB 5.0 Vdc IC 15 Adc 30 Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C IB 0.5 Adc PD 150 W 1.2 W/_C Operating and Storage Junction Temperature TJ, Tstg – 65 to Range + 150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.83 _C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5....