MJH6284 (NPN), MJH6287 (PNP)
Darlington Complementary Silicon Power Transistors
These devices are designed for general...
MJH6284 (
NPN), MJH6287 (
PNP)
Darlington Complementary Silicon Power
Transistors
These devices are designed for general−purpose amplifier and low−speed switching motor control applications.
Features
Similar to the Popular
NPN 2N6284 and the
PNP 2N6287 Rugged RBSOA Characteristics Monolithic Construction with Built−in Collector−Emitter Diode These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak
Symbol VCEO VCB VEB IC
Max 100 100 5.0 20 40
Unit Vdc Vdc Vdc Adc
Base Current
IB
Total Device Dissipation @ TC = 25_C
PD
Derate above 25_C
0.5
Adc
160
W
1.28
W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to + 150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case RqJC
0.78
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
160 140
PD , POWER DISSIPATION (WATTS)
120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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