MJL21193

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C VCEO VCBO VEBO VCEX IC ICM IB PD 250 400 5 400 16 30 5 200 1.43 Vdc Vdc Vdc Vdc Adc Adc Adc W W/_C Operating and Storage Junction Temperature Range TJ, Tstg −65 to + 150 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 0.7 Unit _C/W http://onsemi.com 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS PNP COLLECTOR 2, 4 NPN COLLECTOR 2, 4 1 BASE EMITTER 3 1 BASE EMITTER 3 MARKING DIAGRAM 123...