MJL21193 (PNP), MJL21194 (NPN)
Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technolog...
MJL21193 (
PNP), MJL21194 (
NPN)
Silicon Power
Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C
VCEO VCBO VEBO VCEX
IC ICM IB PD
250 400
5 400 16 30
5 200 1.43
Vdc Vdc Vdc Vdc Adc Adc Adc W W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg
−65 to + 150
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Case
Symbol RqJC
Max 0.7
Unit _C/W
http://onsemi.com
16 AMPERE COMPLEMENTARY SILICON POWER
TRANSISTORS
250 VOLTS, 200 WATTS
PNP COLLECTOR 2, 4
NPN COLLECTOR 2, 4
1 BASE
EMITTER 3
1 BASE
EMITTER 3
MARKING DIAGRAM
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