MJW16212

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJW16212/D MJF18002 (See MJE18002) MJF18004 (See MJE18004) MJF18006 (See MJE18006) SCANSWITCH™ NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJW16212 is a state–of–the–art SWITCHMODE™ bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors. 1500 Volt Collector–Emitter Breakdown Capability Typical Dynamic Desaturation Specified (New Turn–Off Characteristic) Application Specific State–of–the–Art Die Design Fast Switching: 200 ns Inductive Fall Time (Typ) 2000 ns Inductive Storage Time (Typ) Low Saturation Voltage: 0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — 8.0 Volts (Min) MAXIMUM RATINGS MJF18008 (See MJE18008) MJW16212* *Motorola Preferred Device POWER TRANSISTOR 10 AMPERES 1500 VOLTS – VCES 50 AND 150 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ...