MJW21193 (PNP) MJW21194 (NPN)
Silicon Power Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter technology...
MJW21193 (
PNP) MJW21194 (
NPN)
Silicon Power
Transistors
The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VCEO VCBO VEBO VCEX
IC ICM IB PD
250 Vdc 400 Vdc 5.0 Vdc 400 Vdc 16 Adc 30 Adc 5.0 Adc 200 W 1.43 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
− 65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings ...
