MJW3281A

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features Designed for 100 W Audio Frequency Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area − 1 A/100 V @ 1 Second High fT − 30 MHz Typical Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Collector−Emitter Voltage VCEO 230 Collector−Base Voltage VCBO 230 Emitter−Base Voltage VEBO 5.0 Collector−Emitter Voltage − 1.5 V VCEX 230 Collector Current − Continuous Collector Current − Peak (Note 1) IC 15 25 Unit Vdc Vdc Vdc Vdc Adc Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C IB 1.5 Adc PD 200 W 1.43 W/°C Operating and Storage Junction Temperature Range TJ, Tstg −  65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty...