VARACTOR DIODES. 829B Datasheet

829B Datasheet PDF, Equivalent


Part Number

829B

Description

SILICON 28V HYPERABRUPT VARACTOR DIODES

Manufacture

Zetex Semiconductors

Total Page 6 Pages
PDF Download
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829B Datasheet
SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase noise
performance. Available in single or dual common cathode format
in a wide rage of miniature surface mount packages.
Features
· Close tolerance C-V characteristics
· High tuning ratio
· Low IR (typically 200pA)
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
Applications
· VCXO and TCXO
· Wireless communications
· Pagers
· Mobile radio
830 series
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1

829B Datasheet
830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
VR=2V, f=1MHz
829A
829B
830A
830B
831A
831B
832A
832B
833A
833B
834A
834B
835A
835B
836A
836B
MIN.
7.38
7.79
9.0
9.5
13.5
14.25
19.8
20.9
29.7
31.35
42.3
44.65
61.2
64.6
90.0
95.0
NOM.
8.2
8.2
10.0
10.0
15.0
15.0
22.0
22.0
33.0
33.0
47.0
47.0
68.0
68.0
100.0
100.0
MAX.
9.02
8.61
11.0
10.5
16.5
15.75
24.2
23.1
36.3
34.65
51.7
49.35
74.8
71.4
110.0
105.0
Min Q
VR=3V
f=50MHz
250
250
300
300
300
300
200
200
200
200
200
200
100
100
100
100
Capacitance Ratio
C2 / C20
at f=1MHz
MIN.
MAX.
4.3 5.8
4.3 5.8
4.5 6.0
4.5 6.0
4.5 6.0
4.5 6.0
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
5.0 6.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Forward current
Power dissipation at Tamb = 25ЊC SOT23
Power dissipation at Tamb = 25ЊC SOD323
Power dissipation at Tamb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
IF
Ptot
Ptot
Ptot
MAX
200
330
330
250
-55 to +150
UNIT
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
IR = 10uA
VR = 20V
VR = 3V, f = 1MHz
MIN.
25
TYP.
0.2
300
MAX.
20
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2


Features Datasheet pdf 830 series SILICON 28V HYPERABRUPT VARAC TOR DIODES ZC829, ZDC833, ZMV829, ZMDC 830, ZV831 Series Device Description A range of silicon varactor diodes for us e in frequency control and filtering. F eaturing closely controlled CV characte ristics and high Q. Low reverse current ensures very low phase noise performan ce. Available in single or dual common cathode format in a wide rage of miniat ure surface mount packages. Features Close tolerance C-V characteristics High tuning ratio · Low IR (typicall y 200pA) · Excellent phase noise perfo rmance · High Q · Range of miniature surface mount packages Applications · VCXO and TCXO · Wireless communicatio ns · Pagers · Mobile radio *Where st eeper CV slopes are required there is t he 12V hyperabrupt range. ZC930, ZMV930 , ZV930, ZV931 Series ISSUE 6 - JANUARY 2002 1 830 series TUNING CHARACTERIST ICS at Tamb = 25°C PART Capacitance (p F) V R =2V, f=1MHz MIN. 829A 829B 830A 830B 831A 831B 832A 832B 833A 833B 834A 834B 835A 835B 836A 836B 7.38 7.79.
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