MLN1030S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1030S is Designed for
PACKAGE STYLE .280 4L STUD
A 45...
MLN1030S
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI MLN1030S is Designed for
PACKAGE STYLE .280 4L STUD
A 45°
FEATURES:
Omnigold™ Metalization System
B
D S G
S
D
C J
E
I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.250 A 40 V 28 V 3.5 V 7.0 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 20 OC/W
O O
DIM A B C D E F G H I J K
F G H K MINIMUM
inches / mm
#8-32 UNC MAXIMUM
inches / mm
1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 .245 / 6.22 .640 / 16.26 .175 / 4.45 .275 / 6.99
1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48
.255 / 6.48 .217 / 5.51 .285 / 7.24
ORDER CODE: ASI10623
CHARACTERISTICS
SYMBOL
BVCBO BVCEO BVEBO ICBO hFE COB PG IC = 1 mA IC = 1 mA IE = 1 mA VCB = 24 V
TC = 25 C
O
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40 28 3.5 0.5
UNITS
V V V mA --pF dB
VCE = 5.0 V VCB = 28 V VCE = 20 V POUT = 1.0 W
IC = 100 mA f = 1.0 MHz ICQ = 150 mA f = 1.0 GHz
20
120 5.0
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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