MLP1N06

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MLP1N06CL/D SMARTDISCRETES ™ Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and gate–to–drain clamp for over–voltage protection. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ gate pulldown resistor is recommended to avoid a floating gate condition. The internal gate–to–source and gate–to–drain clamps allow the devices to be applied without use of external transient suppression components. The gate–to– source clamp protects the MOSFET input from electrostatic gate voltage stresses up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain avalanche stresses that occur with inductive loads. This unique design provides voltage clamping that is essentially independent of operating temperature. The MLP1N06CL is fabricated using Motorola’s SMARTDISCRETES technology which combines the advantages of a power MOSFET output device with on–chip protective circuitry. This approach offers an economical means for providing additional functions that protect a power MOSFET in harsh automotive and industrial environments. SMARTDISCRETES devices are specified over a wide temperature range from –50°C to 150°C. Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress Applied to the Device and Pr...