Document
RF COMMUNICATIONS PRODUCTS
NE/SE5539 High frequency operational amplifier
Product specification IC11 April 15, 1992
Philips Semiconductors
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers. Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements.
PIN CONFIGURATION
D, F, N Packages
1 2 3 4 5 6 7 + – 14 13 12 11
+ INPUT NC -VSUPPLY NC
- INPUT NC FREQUENCY COMPENS. NC
FEATURES
• Bandwidth
– Unity gain - 350MHz – Full power - 48MHz – GBW - 1.2GHz at 17dB
VOSADJ / AV ADJ NC GROUND
10 +V 9 8 NC OUTPUT
• Slew rate: 600/Vµs • AVOL: 52dB typical • Low noise - 4nV√Hz typical • MIL-STD processing available
APPLICATIONS
Top View
SL00570
Figure 1. Pin Configuration
• High speed datacom • Video monitors & TV
ORDERING INFORMATION
DESCRIPTION 14-Pin Plastic Dual In-Line Package (DIP) 14-Pin Plastic Small Outline (SO) package 14-Pin Ceramic Dual In-Line Package 14-Pin Ceramic Dual In-Line Package
• Satellite communications • Image processing • RF instrumentation & oscillators • Magnetic storage • Military communications
TEMPERATURE RANGE 0 to +70°C 0 to +70°C 0 to +70°C -55 to +125°C
ORDER CODE NE5539N NE5539D NE5539F SE5539F
DWG # SOT27-1 SOT108-1 0581B 0581B
ABSOLUTE MAXIMUM RATINGS1
SYMBOL VCC PDMAX Supply voltage Maximum power dissipation, TA = 25°C (still-air)2 F package N package D package Operating temperature range NE SE Storage temperature range Max junction temperature Lead soldering temperature (10sec max) PARAMETER RATING ±12 UNITS V
1.17 1.45 0.99 0 to 70 -55 to +125 -65 to +150 150 +300
W W W °C °C °C °C °C
TA TSTG TJ TSOLD
NOTES: 1. Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA. 2. Derate above 25°C, at the following rates: F package at 9.3mW/°C N package at 11.6mW/°C D package at 7.9mW/°C
1992 Apr 15
2
853-0814 06456
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
EQUIVALENT CIRCUIT
(12) FREQUENCY COMP. (10) +VCC
R18 (–) 14 INVERTING INPUT
R19
R3
R5
R2 (+) 1 NON–INVERTING INPUT R6 Q1 Q2 Q4
Q6
R8 Q5
Q3 Q7 Q8
R20
R21 R1 R4 R9 R10 2.2k
(8) OUTPUT
(7) GRD R13 Q10 R11 Q11 R12 R15 R14 R16 R17 (3) –VCC 5 R7
Q9
SL00571
Figure 2. Equivalent Circuit
DC ELECTRICAL CHARACTERISTICS VCC = ±8V, TA = 25°C; unless otherwise specified.
SYMBOL VOS PARAMETER Input offset voltage ∆VOS/∆T Over temp IOS Input offset current ∆IOS/∆T Over temp IB Input bias current ∆IB/∆T CMRR RIN ROUT Common mode rejection ratio Input impedance Output impedance F = 1kHz, RS = 100Ω, VCM ±1.7V Over temp 70 70 TA = 25°C TA = 25°C TEST CONDITIONS VO = 0V 0V, RS = 100Ω Over temp TA = 25°C SE5539 MIN TYP 2 2 5 0.1 0.1 0.5 6 5 10 80 80 100 10 100 10 70 25 13 5 10 80 20 3 1 0.5 2 MAX 5 3 2.5 5 5 mV µV/°C µA nA/°C µA nA/°C dB kΩ Ω MIN NE5539 TYP MAX UNITS
1992 Apr 15
3
Philips Semiconductors
Product specification
High frequency operational amplifier
NE/SE5539
DC ELECTRICAL CHARACTERISTICS (Continued) VCC = ±8V, TA = 25°C; unless otherwise specified.
SYMBOL VOUT PARAMETER Output voltage swing TEST CONDITIONS RL = 150Ω to GND and 470Ω to -VCC RL = 25Ω to GND Over temp RL = 25Ω to GND TA = 25°C +Swing -Swing +Swing -Swing +Swing -Swing +2.3 -1.5 +2.5 -2.0 +3.0 -2.1 +3.1 -2.7 14 14 11 11 300 18 17 15 14 1000 200 47 52 1000 57 11 15 14 18 SE5539 MIN TYP MAX MIN +2.3 -1.7 NE5539 TYP +2.7 -2.2 MAX UNITS V
VOUT
Output voltage swing
V
ICC+ CC ICCCC PSRR AVOL AVOL
Positive supply current Negative supply current Power supply rejection ratio Large signal voltage gain Large signal voltage gain
VO = 0, R1 = ∞, Over temp VO = 0, R1 = ∞, TA = 25°C VO = 0, R1 = ∞, Over temp VO = 0, R1 = ∞, TA = 25°C ∆VCC = ±1V, Over temp ∆VCC = ±1V, TA = 25°C VO = +2.3V, -1.7V, RL = 150Ω to GND, 470Ω to -VCC VO = +2.3V, -1.7V RL = 2Ω to GND Over temp TA = 25°C Over temp TA = 25°C 46 48
mA mA µV/V dB dB
47 60 53 58
52
57 dB
AVOL
Large signal voltage gain
VO = +2.5V, -2.0V RL = 2Ω to GND
DC ELECTRICAL CHARACTERISTICS VCC = ±6V, TA = 25°C; unless otherwise specified.
SYMBOL VOS IOS IB CMRR ICC+ CC ICCCC PSRR PARAMETER Input offset voltage Input offset current Input bias current Common-mode rejection ratio Positive supply current Negative supply current Power supply rejection ratio ∆VCC = ±1V Over VOUT O voltage l swing i Output RL = 150Ω to GND and 390Ω to –VCC temp TA = 25°C VCM = ±1.3V, RS = 100Ω Over temp TA = 25°C Over temp TA = 25°CmA Over temp TA = 25°C +Swing –Swing +Swing –Swing +1.4 –1.1 +1.5 –1.4 +2.0 –1.7 +2.0 –1.