NE6500379

DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES High Output Power High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ. High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz ORDERING INFORMATION Part Number NE6500379A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE6500379A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IG PT Tch Tstg Ratings 15 –7 5.6 50 21 150 –65 to +150 Unit V V A mA W °C °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13495EJ2V0DS00 (2nd edition) Date Published August 1998 N CP(K) Printed in Ja...