NE6501077

PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. PACKAGE DIMENSIONS (UNIT: mm) 17.5 ±0.5 14.3 1.0 ±0.1 GATE SOURCE FEATURES Class A operation High output power: 39.5 dBm (typ) High gain: 10.5 dB (typ) High power added efficiency: 40 % (typ) Hermetically sealed ceramic package 2.26 ±0.4 0.2 MAX. 1.0 0.1–0.02 +0.06 2.5 R1.25, 2 PLACES DRAIN 8.9 ±0.4 6.35 ±0.4 4.0 MIN BOTH LEADS 3.8 MAX. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Temperature Cycling * TC = 25 ˚C Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive device. VDSX VGDX VGSX ID IG PT(*) Tch Tstg T∞ 15 –18 –12 9.0 50 50 175 –65 to +175 –40 to +120 V V V A mA W ˚C ˚C ˚C Document No. P10978EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 NE6501077 MAXIMUM OPERATION RANGE CHARACTERISTIC Drain to Source Voltage Channel Temperature Input Power Gate Resistance SYMBOL VDS Tch Gcomp Rg MIN. – – – – TYP. 10 – – – MAX. 10 130 3 100 UNIT V ˚C dBcomp Ω ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Saturated Drain Curr...