Document
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE650R279A
0.2 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power • High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ.
• High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz
ORDERING INFORMATION (PLAN)
Part Number NE650R279A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel
Remark
To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE650R279A)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Forward Current Gate Reverse Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IGF IGR PT Tch Tstg Ratings 15 –7 0.3 8 8 2.1 150 –65 to +150 Unit V V A mA mA W °C °C
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive device.
The information in this document is subject to change without notice.
Document No. P13678EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan
©
1998
NE650R279A
RECOMMENDED OPERATING LIMITS
Characteristics Drain to Source Voltage Gain Compression Channel Temperature Symbol VDS Gcomp Tch Test Conditions MIN. TYP. 6.0 MAX. 6.0 3.0 +125 Unit V dB °C
ELECTRICAL CHARACTERISTICS
(TA = 25°C, Unless otherwise specified, using NEC standard test fixture.)
Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Thermal Resistance Output Power at 1 dB Gain Compression Point Drain Current Power Added Efficiency Linear Gain
Note 1
Symbol IDSS Vp BVgd
Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 1 mA Igd = 1 mA
MIN.
TYP. 150
MAX.
Unit mA
–2.5 13
–0.5
V V
Rth PO (1 dB)
Channel to Case f = 1.9 GHz, VDS = 6.0 V Rg = 30 Ω IDset = 50 mA (RF OFF) Note 2 15.0
40 23.0
60
°C/W dBm
ID
72 45 16.0
mA % dB
ηadd
GL
Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples.
2
Preliminary Data Sheet
NE650R279A
NE650R279A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, IDset = 50 mA (Preliminary Data)
S11 freq. (MHz) 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 MAG. 0.865 0.861 0.850 0.839 0.833 0.827 0.817 0.809 0.806 0.795 0.789 0.781 0.778 0.779 0.778 0.778 0.781 ANG. (deg.) –103.4 –1.