Document
DATA SHEET
GaAs MES FET
NE713
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 ð5.0 ð6.0 IDSS 270 400 175 ð65 to +175 V V V mA mW mW °C °C [NE71383B] [NE71300]
RECOMMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 3 10 MAX. 4 30 15 Unit V mA dBm
Document No. P11691EJ2V0DS00 (2nd edition) Date Published February 1997 N Printed in Japan
©
1996
NE713
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cut off Voltage Transconductance Noise Figure Associated Gain Noise Figure Associated Gain Output Power at 1 dB Gain Compression Point Thermal Resistance Rth 190 450 °C/W °C/W NE71300 NE71383B SYMBOL IGSO IDSS VGS (off) gm NF Ga NF Ga Po (1 dB) 8.0 11.5 MIN. − 20 −0.5 20 TYP. 1.0 40 −1.1 50 0.6 14.0 1.6 9.5 14.5 1.8 MAX. 10 120 −3.5 − 0.7 UNIT TEST CONDITIONS VGS = −5 V VDS = 3 V, VGS = 0 V VDS = 3 V, ID = 100 µA VDS = 3 V, ID = 10 mA f = 4 GHz VDS = 3 V ID = 10 mA f = 12 GHz
µA
mA V mS dB dB dB dB dBm
f = 12 GHz
VDS = 3 V ID = 30 mA Channel to case
PACKAGE DIMENSIONS (Unit : mm) [NE71383B] 1.88 ± 0.3 1 4.0 MIN. 4.0 MIN. 1.88 ± 0.3 2 4 4.0 MIN.
4.0 MIN. 0.5 ± 0.1 0.1 +0.07 −0.03 1.45 MAX.
3 1.0 ± 0.1
1. 2. 3. 4.
Source Drain Source Gate
2
NE713
CHIP DIMENSIONS (Unit: µm) [NE71300]
450 123 64 76 60
122
Drain
Drain
52 54 40
Source 52
Gate
Gate
120
Source
70
67
18 57 56
48 44
Thickness = 140 µm : BONDING AREA
118
400
3
NE713
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
VGS = 0 V
Ptot − Total Power Dissipation − mW
40 ID − Drain Current − mA 300
00 713 NE
−0.2 V
30
200
3B 38 71 NE
20
−0.4 V
100
10
−0.6 V
0
50
100
150
200
0
1
2
3
4
5
TA − Ambient Temperature − °C
VDS − Drain to Source Voltage − V
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 VDS = 3 V 40 ID − Drain Current − mA NF − Noise Figure − dB
NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 Ga - Associated Gain - dB
30
3.0 Ga 2.0
16
20
12
10 1.0 0 −2.0 NF 0 1 2 4 6 8 10 14 4 20 30 8
−1.0 VGS − Gate to Source Voltage − V
0
f − Frequency − GHz
4
NE713
S-PARAMETER [NE71383B]
VDS = 3 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz 0.5 S11 1.0
2.0
5
0
4
∞
Marker 1 : 2 GHz 2 : 4 GHz 3 : 8 GHz 4 : 12 GHz 5 : 16 GHz
3 1 − 2.0 2 − 1.0
−.