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NE71383B Dataheets PDF



Part Number NE71383B
Manufacturers NEC
Logo NEC
Description L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
Datasheet NE71383B DatasheetNE71383B Datasheet (PDF)

DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain.

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DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (mA) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 ð5.0 ð6.0 IDSS 270 400 175 ð65 to +175 V V V mA mW mW °C °C [NE71383B] [NE71300] RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 3 10 MAX. 4 30 15 Unit V mA dBm Document No. P11691EJ2V0DS00 (2nd edition) Date Published February 1997 N Printed in Japan © 1996 NE713 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cut off Voltage Transconductance Noise Figure Associated Gain Noise Figure Associated Gain Output Power at 1 dB Gain Compression Point Thermal Resistance Rth 190 450 °C/W °C/W NE71300 NE71383B SYMBOL IGSO IDSS VGS (off) gm NF Ga NF Ga Po (1 dB) 8.0 11.5 MIN. − 20 −0.5 20 TYP. 1.0 40 −1.1 50 0.6 14.0 1.6 9.5 14.5 1.8 MAX. 10 120 −3.5 − 0.7 UNIT TEST CONDITIONS VGS = −5 V VDS = 3 V, VGS = 0 V VDS = 3 V, ID = 100 µA VDS = 3 V, ID = 10 mA f = 4 GHz VDS = 3 V ID = 10 mA f = 12 GHz µA mA V mS dB dB dB dB dBm f = 12 GHz VDS = 3 V ID = 30 mA Channel to case PACKAGE DIMENSIONS (Unit : mm) [NE71383B] 1.88 ± 0.3 1 4.0 MIN. 4.0 MIN. 1.88 ± 0.3 2 4 4.0 MIN. 4.0 MIN. 0.5 ± 0.1 0.1 +0.07 −0.03 1.45 MAX. 3 1.0 ± 0.1 1. 2. 3. 4. Source Drain Source Gate 2 NE713 CHIP DIMENSIONS (Unit: µm) [NE71300] 450 123 64 76 60 122 Drain Drain 52 54 40 Source 52 Gate Gate 120 Source 70 67 18 57 56 48 44 Thickness = 140 µm : BONDING AREA 118 400 3 NE713 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V Ptot − Total Power Dissipation − mW 40 ID − Drain Current − mA 300 00 713 NE −0.2 V 30 200 3B 38 71 NE 20 −0.4 V 100 10 −0.6 V 0 50 100 150 200 0 1 2 3 4 5 TA − Ambient Temperature − °C VDS − Drain to Source Voltage − V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 VDS = 3 V 40 ID − Drain Current − mA NF − Noise Figure − dB NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 Ga - Associated Gain - dB 30 3.0 Ga 2.0 16 20 12 10 1.0 0 −2.0 NF 0 1 2 4 6 8 10 14 4 20 30 8 −1.0 VGS − Gate to Source Voltage − V 0 f − Frequency − GHz 4 NE713 S-PARAMETER [NE71383B] VDS = 3 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz 0.5 S11 1.0 2.0 5 0 4 ∞ Marker 1 : 2 GHz 2 : 4 GHz 3 : 8 GHz 4 : 12 GHz 5 : 16 GHz 3 1 − 2.0 2 − 1.0 −.


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