NE73430

NPN SILICON GENERAL PURPOSE TRANSISTOR FEATURES LOW NOISE FIGURE: < 3 dB at 500 MHz HIGH GAIN: 15 dB at 500 MHz HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) SMALL COLLECTOR CAPACITANCE: 1 pF HIGH RELIABILITY METALLIZATION 30 (SOT 323 STYLE) NE734 SERIES 35 (MICRO-X) DESCRIPTION The NE734 series of NPN silicon general purpose UHF transistors provide the designer with a wide selection of reliable transistors for high speed logic and wide-band low noise amplifier applications. The series uses NEC's highly reliable platinum-silicide, titanium, platinum, and gold metallization system to assure uniform performance and reliability. The NE73433 is in the plastic Mini-Mold package designed for high-speed automated assembly operations for large volume hybrid ICs. For hybrid MIC applications requiring more performance, the NE73435 is recommended. This device is packaged in the economical metal-ceramic, hermetic Micro-X package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Minimum Noise Figure2 at VCE = 10 V, IC = 3 mA, f = 0.5 GHz VCE = 10 V, IC = 5 mA, f = 0.9 GHz Maximum Available Gain3 at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Insertion Power Gain at VCE = 10 V, IC = 10 mA, f = 0.5 GHz f = 1 GHz Forward Current Gain Ratio at VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 5 mA Collector Cutoff Current at V...