NE76000L

LOW NOISE L TO Ku BAND GaAs MESFET FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 LG = 0.3 µm, WG = 280 µm ION IMPLANTATION DESCRIPTION The NE76000 provides a low noise figure and high associated gain through K-Band. The NE760 devices are fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. The surface of the device, except for bonding pads, is passivated with SiO2 and Si3N4 for scratch protection as well as surface stability. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL SPECIFICATIONS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz Associated Gain at VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Compression, VDS = 3 V, IDS = 30 mA, f = 12 GHz Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA Transconductance, VDS = 3 V, IDS = 10 mA Gate to Source Leakage Current, VGS = -4 V Thermal Resistance (Channel to Case) UNITS dB dB dB dB dBm mA V mS µA °C/W 15 -3.0 30.0 NE76000 00 (CHIP) MIN TYP MAX 0.6 1.6 13.0 9.0 14.5 30 -0.8 40.0 1.0 ...