NE76100

DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 ±0.2 1 L L 1.78 ±0.2 0.5 TYP. 4 FEATURES Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz ORDERING INFORMATION PART NUMBER NE76184A-SL NE76184A-T1 NE76184A-T1A SUPPLYING FORM STICK Tape & reel LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm 2 L 3 J L ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 V –5.0 V –6.0 V 100 mA 300 mW 150 ˚C –65 to +150 ˚C 1. Source 2. Drain 3. Source 4. Gate ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain Power Gain SYMBOL IGSO IDSS VGS (off) gm NF Ga Gs MIN. – 30 –0.5 20 – – – TYP. – – – 45 0.8 12 6 MAX. 10 100 –3.0 – 1.4 – – UNIT TEST CONDITIONS VGS = –5 V VDS = 3 V, VGS = 0 VDS = 3 V, ID = 100 µA VDS = 3 V, ID = 10 mA VDD = 3 V ID = 10 mA f = 12 GHz f = 4 GHz µA mA V mS dB dB dB IDSS rank is speci...