NE76118

DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.8 dB TYP. at f = 2 GHz (1.25) 0.60 0.65 +0.1 0.3+0.1 –0.05 0.3 0.4–0.05 2 2.1±0.2 1.25±0.1 3 0.3+0.1 –0.05 0.15+0.1 –0.05 0.3+0.1 –0.05 (1.3) High associated gain 2.0±0.2 Ga = 13.5 dB TYP. at f = 2 GHz Gate width : Wg = 400 Pm 4 pins super mini mold Tape & reel packaging only available V52 1 4 0 to 0.1 ORDERING INFORMATION PART NUMBER NE76118-T1 0.9±0.1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Source), Pin 2 (Gate) face to perforation side of the tape. NE76118-T2 3 Kpcs/Reel. PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118) ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 –5.0 –6.0 IDSS 130 150 –65 to +150 V V V mA mW qC qC Document No. P11129EJ2V0DS00 (2nd edition) Date Published January 1997 N Printed in Japan © 1996 NE76118 RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC Dr...