NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
• LOW NO...
NEC's
NPN SILICON HIGH FREQUENCY
TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz
E
NE856 SERIES
LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION LOW COST
00 (CHIP)
VCC = 10 V, IC 7 mA MSG
4.0 3.5 3.0 2.5 NFMIN 2.0 1.5 1.0 0.4 0.5 1.0 2 3 4 5 GA MAG
20
Noise Figure, NF (dB)
15
Maximum Associated Gain, Maximum Stable Gain, Associated Gain, MAG, MSG, GA (dB)
rs e b m : u DESCRIPTION E n ot T t n O r . e a N r n p a g E S si ng heet A i e E d w PL w llo as r e t o o n f a f d r e Th his ded fo office t fro m mmen sales l o rec se cal a Ple ils: a det 5635 NE8
NEC's NE856 series of
NPN epitaxial silicon
transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization system and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles.
32 (TO-92) 34 (SOT 89 STYLE) 18 (SOT 343 STYLE) NE85600 NOISE FIGURE AND GAIN vs. FREQUENCY 30 (SOT 323 STYLE) 33 (SOT 23 STYLE)
10
B
35 (MICRO-X) 19 (3 PIN ULTRA SUPER MINI MOLD)
5
Frequency, f (GHz)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
California East...
