NE94430

NPN SILICON OSCILLATOR AND MIXER TRANSISTOR FEATURES LOW COST HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CCr b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE= 0.55 pF TYP NE944 SERIES DESCRIPTION The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE CODE SYMBOLS ICBO hFE VCE(sat) fT COB CCrb'b CRE RTH (J-C) RTH (J-A) PT PARAMETERS AND CONDITIONS Collector Cutoff Current, VCB = 12 V, IE = 0 DC Current Gain, VCE = 10 V, IC = 5.0 mA Collector Saturation Voltage, IC = 10 mA, IB = 1.0 mA Gain Bandwidth Product, VCE = 3 V, IE = 5 mA Output Capacitance, VCB = 3 V, IE = 0 mA, f = 1.0 MHz Collector to Base Time Constant, VCE = 3 V, IE = -5.0 mA, f = 31.9 MHz Feedback Capacitance, VCB = 10 V, IE = 0 mA, f = 1.0 MHz Thermal Resistance, Junction to Case (infinite heat sink) Thermal Resistance, Junction to Ambient (free air) Power Dissipation V GHz pF ps pF °C/W °C/W mW 200 833 150 1.2 2.0 0.7 3.5 1.2 8.0 0.55 5.0 1.0 200 620 150 µA 40 100 NE94430 2SC4184 30 UNITS MIN TYP MAX MIN 0.1 200 0.5 1.3 50 100 NE94433 2SC3545 33 TYP MAX 0.1 250 0.5 2.0 Note: 1. Electronic Indu...